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| TSD1760 Low Vcesat NPN Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 50V 50V 3A 0.5V @ IC / IB = 2A / 200mA Features Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP Ordering Information Part No. TSD1760CP RO Package TO-252 Packing 2.5Kpcs / 13" Reel Structure Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation DC Pulse Ta=25C Tc=25C Symbol VCBO VCEO VEBO IC PD Limit 50 50 5 3 7 (note 1) 1 (note 2) 15 +150 - 55 to +150 Unit V V V A W o o Operating Junction Temperature TJ Operating Junction and Storage Temperature Range TSTG Note: 1. Single pulse, Pw=10mS, Duty2% 2. PCB 1.7mm thick, collector copper plating 10mm x 10mm or larger. C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Conditions IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 30V, IE = 0 VEB = 4V, IC = 0 IC / IB = 2A / 200mA VCE = 2V, IC = 100mA Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT Cob Min 50 50 5 ---82 --- Typ -----0.25 -90 45 Max ---1 1 0.5 560 --- Unit V V V uA uA V VCE =5V, IC=50mA, f=100MHz Output Capacitance VCB = 10V, f=1MHz * Pulse Test: Pulse Width 380uS, Duty Cycle2% MHz pF 1/4 Version: A09 TSD1760 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: A09 TSD1760 Low Vcesat NPN Transistor TO-252 Mechanical Drawing TO-252 DIMENSION DIM A A1 B C D E F G G1 G2 H I J K L M MILLIMETERS MIN MAX 2.3BSC 4.6BSC 6.80 5.40 6.40 2.20 0.00 5.20 0.75 0.55 0.35 0.90 2.20 0.50 0.90 1.30 7.20 5.60 6.65 2.40 0.20 5.40 0.85 0.65 0.65 1.50 2.80 1.10 1.50 1.70 INCHES MIN MAX 0.09BSC 0.18BSC 0.268 0.213 0.252 0.087 0.000 0.205 0.030 0.022 0.014 0.035 0.087 0.020 0.035 0.051 0.283 0.220 0.262 0.094 0.008 0.213 0.033 0.026 0.026 0.059 0.110 0.043 0.059 0.67 3/4 Version: A09 TSD1760 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A09 |
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